Title: Nanomechanical and Nanotribological Responses of SiO2 Thin Films
Presenter: Fang-Yin Lin
Affiliation: University of Florida
Abstract: The nanomechanical and tribological responses of semiconductor/gate-oxide interfaces have been demonstrated to significantly affect the performance of devices. Classical molecular dynamics (MD) simulations are used here to investigate these responses at the atomic scale. The simulations utilize the variable charge, empirical charge optimized many-body (COMB) reactive potential to describe the surface interactions and mechanical responses occurring in different contacting surfaces of Si/SiO2 systems. In particular, the atomic-scale mechanisms by which thin films of SiO2 accommodate of a rigid tip are investigated to determine the influence of thin film structure and to measure these properties as a function of normal load. In addition, nanoscratching tests with varying normal loads are used to calculate the coefficient of friction and examine the wear behavior of the films. In all cases the influence of charge transfer on the film responses is determined. The work is supported by National Science Foundation (DMR-1005779) and the Office of Naval Research.