Formation and growth of stacking fault tetrahedra in Ni via vacancy aggregation mechanism

DS Aidhy and CY Lu and K Jin and HB Bei and YW Zhang and LM Wang and WJ Weber, SCRIPTA MATERIALIA, 114, 137-141 (2016).

DOI: 10.1016/j.scriptamat.2015.12.020

Using molecular dynamics simulations, the formation and growth of stacking fault tetrahedra (SFT) are captured by vacancy cluster diffusion and aggregation mechanisms in Ni. The vacancy-tetrahedron acts as a nucleation point for SFT formation. Simulations show that perfect SFT can grow to the next size perfect SFT via a vacancy aggregation mechanism. The stopping and range of ions in matter (SRIM) calculations and transmission electron microscopy (TEM) observations reveal that SFT can form farther away from the initial cascade-event locations, indicating the operation of diffusion-based vacancy-aggregation mechanism. (C) 2015 Elsevier Ltd. All rights reserved.

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