Strain Effect on the Device Characteristics of Vertical Tunneling Graphene Heterostructure-Based Transistor
N Ghobadi, 2016 24TH IRANIAN CONFERENCE ON ELECTRICAL ENGINEERING (ICEE), 1897-1901 (2016).
In this work, the compressive normal strain effect on the performance and device characteristics of vertical tunneling graphene ITT (VTGFET) is theoretically investigated. The vertical tunneling FET is made of the heterostructure of vaphene and hexagonal boron nitride. Molecular dynamic simulation is used to calculate the stress-strain characteristic of the device. An atomistic tight-binding model along with the NEGF formalism is used to investigate the on and off state current and on/off current ratio of VTGFET under strain. Moreover, the effect of different number of hBN layers on the device characteristics is studied. It can be inferred from the results that the compressive normal strain leads to significant decrease in on/off current ratio of device. In addition, the results show that the increase of the number of hBN layers leads to larger strain induced current variation.
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