Mg Doping Affects Dislocation Core Structures in GaN
SK Rhode and MK Horton and MJ Kappers and S Zhang and CJ Humphreys and RO Dusane and SL Sahonta and MA Moram, PHYSICAL REVIEW LETTERS, 111, 025502 (2013).
Aberration-corrected scanning transmission electron microscopy was used to investigate the core structures of threading dislocations in undoped GaN films with both high and low dislocation densities, and in a comparable high dislocation density Mg-doped GaN film. All a-type dislocations in all samples have a 5/7-atom core structure. In contrast, most (a + c)-type dislocations in undoped GaN dissociate due to local strain variations from nearby dislocations. In contrast, Mg doping prevents (a + c)-type dislocation dissociation. Our data indicate that Mg affects dislocation cores in GaN significantly.
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