Measurement of the indium concentration in high indium content InGaN layers by scanning transmission electron microscopy and atom probe tomography

T Mehrtens and M Schowalter and D Tytko and P Choi and D Raabe and L Hoffmann and H Jonen and U Rossow and A Hangleiter and A Rosenauer, APPLIED PHYSICS LETTERS, 102, 132112 (2013).

DOI: 10.1063/1.4799382

A method for determining concentrations from high-angle annular dark field-scanning transmission electron microscopy images is presented. The method is applied to an InGaN/GaN multi-quantum well structure with high In content, as used for the fabrication of light emitting diodes and laser diodes emitting in the green spectral range. Information on specimen thickness and In concentration is extracted by comparison with multislice calculations. Resulting concentration profiles are in good agreement with a comparative atom probe tomography analysis. Indium concentrations in the quantum wells ranging from 26 at. % to 33 at. % are measured in both cases. (C) 2013 American Institute of Physics.

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