Large-scale Molecular Dynamics Modeling of a-SiO2
NB Liao, PROGRESS IN MATERIALS AND PROCESSES, PTS 1-3, 602-604, 751-754 (2013).
Silicon dioxide plays an important role in integrated circuits and microelectronics. However, the experiments have limitations in micro /nano-scale characterization of fracture properties at high temperatures. In this paper, the structural and fracture properties of amorphous silicon dioxide (a-SiO2) were studied at temperatures up to 1500K. The simulation results consist with the experiments on pair distribution functions, structure factor and angular distributions.
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