Influence of Surface Curvature on Silicon Sputtering by Low-Energy Ar Ions
AA Sycheva, TECHNICAL PHYSICS LETTERS, 46, 1184-1187 (2020).
Molecular dynamics (MD) method was used to study 200 eV Ar ion impact on silicon nanoparticles of various sizes . Based on the MD simulations, the analysis of sputtering mechanisms and differences in the ion energy deposition which are determined by the curvature of the target surface, is performed in the paper.
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