Molecular-Dynamics Simulation of the Low-Temperature Surface Reconstruction of a GaAs(001) Surface during the Nanoindentation Process
ND Prasolov and AA Gutkin and PN Brunkov, SEMICONDUCTORS, 53, 1386-1388 (2019).
Nanoindentation to a depth of 1 nm in (001) GaAs surfaces terminated by As simulated in the temperature range from 1 to 15 K using the molecular-dynamics method is simulated. It is shown that this is accompanied by surface reconstruction with the formation of stable dimers As (1 x 2), which do not disappear after indenter withdrawal from the surface.
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