Molecular dynamics simulations of silicon carbide nanowires under single-ion irradiation
WZ He and CQ Chen and ZP Xu, JOURNAL OF APPLIED PHYSICS, 126, 125902 (2019).
Understanding irradiation effects is crucial for risk management in space science as well as technological development in material processing, imaging, and radiotherapy. The single-particle event is a stepping stone to this complicate, multiscale problem, which finds relevance in low-dose irradiation where long-term effects are usually concerned. Using molecular dynamics simulations, we explore the responses of crystalline silicon carbide nanowires under single-Ga-ion irradiation. It turns out that the channeling mode is more probable compared to focusing for crystalline surfaces at a normal angle of incidence. We find that the surface of nanowires plays a dual role as sites for both defect nucleation and annihilation, leading to notable diameter-dependent responses to the irradiation. The defects created in a single-ion event are localized within a few nanometers, and there exists a critical diameter for nanowires to be minimally damaged. These results allow quantitative assessment of the irradiation damage of nanostructures and guide their design for irradiation-resistant applications.
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