Investigation of Nanocutting Characteristics of Off-Axis 4H-SiC Substrate by Molecular Dynamics
MC Wang and FL Zhu and YX Xu and S Liu, APPLIED SCIENCES-BASEL, 8, 2380 (2018).
Silicon carbide (SiC), especially 4H-SiC, is an ideal semiconductor in power electronics due to its outstanding electrical and thermal properties. It has high hardness and brittleness, which makes it difficult to machine. To understand the nanomachining characteristics of off-axis 4H-SiC and provide suggestions on 4H-SiC substrate thinning, the nanocutting process of 4 degrees off-axis 4H-SiC was simulated by molecular dynamics. The results showed that the stacking fault induced by cutting propagates in the basal plane, and propagates deep into the SiC workpiece when the angle between the cutting direction and the c-axis is smaller than 90 degrees. Bond reconstruction is found near the slip plane. The cutting depth is also a key parameter in nanocutting. With smaller cutting depth, machining is more like scratching than cutting. With larger cutting depth, more atoms are involved in the cutting, cutting force and workpiece temperature are higher, and more defects exist.
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