Atomic rearrangements at migration of symmetric tilt grain boundaries in vanadium
DS Kryzhevich and KP Zolnikov and AV Korchuganov, COMPUTATIONAL MATERIALS SCIENCE, 153, 445-448 (2018).
The paper reports on a molecular dynamics study of atomic rearrangements and migration of symmetric fill grain boundaries in a vanadium crystallite under shear load specified as constant-velocity displacements of its faces parallel to the boundary plane. The study shows that such grain boundaries migrate normal to their plane with a high velocity and that this velocity depends on their structure and on the shear rate. The migration is jump-like, involves a periodic rise and drop of internal stress, and represents a sequence of specific self- consistent structural rearrangements in grain boundary regions.
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