Cooperative dissociations of misfit dislocations at bimetal interfaces
K Liu and RF Zhang and IJ Beyerlein and XY Chen and H Yang and TC Germann, APL MATERIALS, 4, 111101 (2016).
Using atomistic simulations, several semi-coherent cube-on-cube bimetal interfaces are comparatively investigated to unravel the combined effect of the character of misfit dislocations, the stacking fault energy difference between bimetal pairs, and their lattice mismatch on the dissociation of interfacial misfit dislocations. Different dissociation paths and features under loadings provide several unique deformation mechanisms that are critical for understanding interface strengthening. In particular, applied strains can cause either the formation of global interface coherency by the migration of misfit dislocations from an interface to an adjoining crystal interior or to an alternate packing of stacking faults connected by stair-rod dislocations. (C) 2016 Author(s).
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