Dislocation core structures in (0001) InGaN
SL Rhode and MK Horton and SL Sahonta and MJ Kappers and SJ Haigh and TJ Pennycook and C McAleese and CJ Humphreys and RO Dusane and MA Moram, JOURNAL OF APPLIED PHYSICS, 119, 105301 (2016).
Threading dislocation core structures in c-plane GaN and InxGa1-xN (0.057 <= x <= 0.20) films were investigated by aberration-corrected scanning transmission electron microscopy. a-type dislocations are unaffected by alloying with indium and have a 5/7-atom ring core structure in both GaN and InxGa1-xN. In contrast, the dissociation lengths of (a+c)-type dislocations are reduced, and new 7/4/9-atom ring and 7/4/8/5-atom ring core structures were observed for the dissociated (a+c)-type dislocations in InxGa1-xN, which is associated with the segregation of indium near (a+c)-type and c-type dislocation cores in InxGa1-xN, consistent with predictions from atomistic Monte Carlo simulations. (C) 2016 AIP Publishing LLC.
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