Nanoscale Elastic Recovery of Silicon While Cutting at Different Temperatures: An MD Simulation-Based Study
SZ Chavoshi and XC Luo, ADVANCES IN MANUFACTURING TECHNOLOGY XXX, 3, 131-136 (2016).
With the aid of molecular dynamics (MD) simulation, the current study focuses on analyzing the atomic-scale elastic recovery of single crystal silicon during nanometric cutting at a wide range of workpiece temperatures (300-1500 K). Variation of the local potential energy in the cutting zone and distribution of atomic hydrostatic and shear stresses within the workpiece were monitored in order to qualify the differences in the elastic recovery behavior of silicon at various temperatures. A sharp rise of the potential energy was observed at low temperatures, indicating large elastic deformation at low temperatures. It was inferred that at temperatures of 1173 K and 1500 K, the elastic deformation of the workpiece is virtually eliminated. The state of hydrostatic stress in the machined surface also suggested that material beneath the flank face of the cutting tool exhibits strong elastic recovery at room temperature due to material relaxation under the flank face.
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