Effect of Structural Relaxation on the Electronic Structure of Graphene on Hexagonal Boron Nitride
GJ Slotman and MM van Wijk and PL Zhao and A Fasolino and MI Katsnelson and SJ Yuan, PHYSICAL REVIEW LETTERS, 115, 186801 (2015).
We performed calculations of electronic, optical, and transport properties of graphene on hexagonal boron nitride with realistic moire patterns. The latter are produced by structural relaxation using a fully atomistic model. This relaxation turns out to be crucially important for electronic properties. We describe experimentally observed features such as additional Dirac points and the "Hofstadter butterfly" structure of energy levels in a magnetic field. We find that the electronic structure is sensitive to many-body renormalization of the local energy gap.
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