Epitaxial Post-Implant Recrystallization in Germanium Nanowires
RA Kelly and B Liedke and S Baldauf and A Gangnaik and S Biswas and Y Georgiev and JD Holmes and M Posselt and N Petkov, CRYSTAL GROWTH & DESIGN, 15, 4581-4590 (2015).
As transistor dimensions continue to diminish, techniques for fabrication need to be adapted. In particular, crystal recovery post ion implantation is required due to destructive ion bombardment inducing crystal damage including amorphization. Here, we report a study on the post-implant recrystallization in germanium (Ge) nanowires (NWs) following gallium (Ga) ion doping. In this work a variation of NW diameters and orientations were irradiated and annealed in situ to investigate the mechanism of recrystallization. An added complication of misorientation of crystal grains increases the complexity of crystal recovery for suspended NWs. We show that when the misorientation is prevented, by leaving a crystal link between two seeds and providing a rigid support, recrystallization occurs primarily via solid phase epitaxial growth (SPEG). Finally, we demonstrate that top-down fabricated Ge NWs on insulator can be recovered with no extended defects. This work highlights both experimentally and through molecular dynamic simulations the importance of engineering crystal recovery in Ge NWs which may have potential for next-generation complementary metal- oxide semiconductor (CMOS) devices.
Return to Publications page