Self-heating of Nano-Scale SOI MOSFETs: TCAD and Molecular Dynamics Simulations
A Burenkov and V Belko and J Lorenz, 2013 19TH INTERNATIONAL WORKSHOP ON THERMAL INVESTIGATIONS OF ICS AND SYSTEMS (THERMINIC), 305-308 (2013).
Self-heating of fully-depleted SOI MOSFETs scaled according to ITRS specifications for the year 2015 is investigated using numerical TCAD simulations and the method of molecular dynamics. The local warming-up due to self-heating of SOI-based transistors can exceed 200 K and must be considered in the simulation. Thermal properties of the few- nanometer-thin silicon layers differ significantly from those of bulk silicon. Therefore, molecular dynamics simulations were applied to quantify thermal transport in the channel of the ultra-thin-silicon body SOI transistors.
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