Tensile deformation induced structural rearrangement in amorphous silicon nitride
N Liao and W Xue and P Yang and M Zhang, JOURNAL OF STRUCTURAL CHEMISTRY, 53, 215-219 (2012).
Silicon nitride exhibits good mechanical properties and thermal stability at high temperatures. Since experiments have limitations in nanoscale characterization of the chemical structure and related properties, atomistic simulation is a proper way to investigate the mechanism of this unique feature. In this paper, the melt-quench method is used to generate the amorphous structure of silicon nitride; then the structural properties of silicon nitride under tensile deformation were studied by angular pair distribution functions. The corresponding mechanism of tensile stress induced structure rearrangement is explored.
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