Single Point Diamond Turning of Single Crystal Silicon Carbide: Molecular Dynamic Simulation Study
S Goel and XC Luo and RL Reuben and WB Rashid and JN Sun, PRECISION MACHINING VI, 496, 150-155 (2012).
Silicon carbide can meet the additional requirements of operation in hostile environments where conventional silicon-based electronics (limited to 623K) cannot function. However, being recent in nature, significant study is required to understand the various machining properties of silicon carbide as a work material. In this paper, a molecular dynamic (MD) simulation has been adopted, to simulate single crystal beta-silicon carbide (cubic) in an ultra precision machining process known as single point diamond turning (SPDT). beta-silicon carbide (cubic), similar to other materials, can also be machined in ductile regime. It was found that a high magnitude of compression in the cutting zone causes a sp(3) - sp(2) order-disorder transition which appears to be fundamental cause of wear of diamond tool during the SPDT process.
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