Effect of Temperature on the Void Nucleation and Growth Parameters for Single Crystal Copper
S Rawat and M Warrier and S Chaturvedi and VM Chavan, SOLID STATE PHYSICS: PROCEEDINGS OF THE 55TH DAE SOLID STATE PHYSICS SYMPOSIUM 2010, PTS A AND B, 1349, 87-88 (2011).
Molecular Dynamics simulations have been performed for uniform triaxial expansion of single-crystal copper at high strain-rate (5x10(9)/s) with different initial temperatures. We have used the LAMMPS (Large-scale Atomic/Molecular Massively Parallel Simulator) code for this study. It is found that the macroscopic Nucleation and Growth (NAG) model is valid at the atomistic scale. There is a monotonic decrease in the void nucleation and growth thresholds with increase in temperature. When we approach the melting point of copper, we observe a double-dip in the pressure-time profile. The analysis of this double-dip shows that the first minimum corresponds to the loss of long-range order but there is no void nucleation at this juncture. The second minimum corresponds to the void nucleation and incipient growth of voids.
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